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d a t a sh eet product speci?cation file under integrated circuits, ic01 march 1989 integrated circuits TDA1072AT am receiver circuit
march 1989 2 philips semiconductors product speci?cation am receiver circuit TDA1072AT general description the tda 1072at integrated am receiver circuit performs the active and part of the filtering functions of an am radio receiver. it is intended for use in mains-fed home receivers and car radios. the circuit can be used for oscillator frequencies up to 50 mhz and can handle rf signals up to 500 mv. rf radiation and sensitivity to interference are minimized by an almost symmetrical design. the voltage-controlled oscillator provides signals with extremely low distortion and high spectral purity over the whole frequency range even when tuning with variable capacitance diodes. if required, band switching diodes can easily be applied. selectivity is obtained using a block filter before the if amplifier. features inputs protected against damage by static discharge gain-controlled rf stage double balanced mixer separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils gain-controlled if stage with wide agc range full-wave, balanced envelope detector internal generation of agc voltage with possibility of second-order filtering buffered field strength indicator driver with short-circuit protection af preamplifier with possibilities for simple af filtering electronic standby switch. quick reference data package outline 16-lead mini-pack; plastic (so16; sot109a); sot109-1; 1996 august 13. parameter conditions symbol min. typ. max. unit supply voltage range v p 7.5 - 10 v supply current range i p 15 - 26 ma rf input voltage for s + n/n = 6 db at m = 30% v i - 1.5 -m v rf input voltage for 3% total harmonic distortion (thd) at m = 80% v i - 500 - mv af output voltage with v i = 2 mv; f i = 1 mhz; m = 30% and f m = 400 hz v o(af) - 310 - mv agc range: change of v i for 1 db change of v o(af) - 86 - db field strength indicator voltage at v i = 500 mv; r l(9) = 2.7 k w v ind - 2.8 - v
march 1989 3 philips semiconductors product speci?cation am receiver circuit TDA1072AT fig.1 block diagram and test circuit (connections shown in broken lines are not part of the test circuit). (1) coil data: toko sample no. 7xns-a7523dy; l1: n1/n2 = 12/32; q o = 65; q b = 57. filter data: z f = 700 w at r 3-4 = 3 k w ; z 1 = 4.8 k w .
march 1989 4 philips semiconductors product speci?cation am receiver circuit TDA1072AT functional description gain-controlled rf stage and mixer the differential amplifier in the rf stage employs an agc negative feedback network to provide a wide dynamic range. very good cross-modulation behaviour is achieved by agc delays at the various signal stages. large signals are handled with low distortion and the s/n ratio of small signals is also improved. low noise working is achieved in the differential amplifier by using transistors with a low base resistance. a double balanced mixer provides the if output to pin 1. oscillator the differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. the oscillator is voltage-controlled and has little distortion or spurious radiation. it is specially suitable for electronic tuning using variable capacitance diodes. band switching diodes can easily be applied using the stabilized voltage v 11-16 . an extra buffered oscillator output is available for driving a synthesizer. if this is not needed, resistor r l(10) can be omitted. gain-controlled if ampli?er this amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. both stages are gain-controlled by the agc negative feedback network. detector the full-wave, balanced envelope detector has very low distortion over a wide dynamic range. the residual if carrier is blocked from the signal path by an internal low-pass filter. af preampli?er this stage preamplifies the audio frequency output. the amplifier output stage uses an emitter follower with a series resistor which, together with an external capacitor, provides the required low-pass filtering for af signals. agc ampli?er the agc amplifier provides a control voltage which is proportional to the carrier amplitude. second-order filtering of the agc voltage achieves signals with very little distortion, even at low audio frequencies. this method of filtering also gives a fast agc settling time which is advantageous for electronic search tuning. the agc settling time can be further reduced by using capacitors of smaller value in the external filter. the agc voltage is fed to the rf and if stages via suitable agc delays. the capacitor at pin 7 can be omitted for low-cost applications. field strength indicator output a buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input signals over the whole dynamic range. if field strength information is not needed, r l(9) can be omitted. standby switch this switch is primariiy intended for am/fm band switching. during standby mode the oscillator, mixer and demodulator are switched off. short-circuit protection all pins have short-circuit protection to ground.
march 1989 5 philips semiconductors product speci?cation am receiver circuit TDA1072AT ratings limiting values in accordance with the absolute maximum rating system (iec 134) note 1. mounted on epoxiprint. thermal resistance note 1. mounted on epoxiprint. parameter conditions symbol min. max. unit supply voltage v p = v 13-16 v 13 - 12 v input voltage pins 14-15 v 14-15 - 10 v pins 14-16 v 14-16 - v p v pins 15-16 v 15-16 - v p v pins 14-16 v 14-16 -- 0.6 v pins 15-16 v 15-16 -- 0.6 v input current (pins 14 and 15) i 14-15 - 200 ma total power dissipation (note 1) p tot - 300 mw operating ambient temperature range t amb - 40 + 80 c storage temperature range t stg - 55 + 150 c junction temperature t j - + 125 c from junction to ambient r th j-a 300 k/w 160 k/w (1)
march 1989 6 philips semiconductors product speci?cation am receiver circuit TDA1072AT characteristics v p = v 13-16 = 8.5 v; t amb = 25 c; f i = 1 mhz; f m = 400 hz; m = 30%; f if = 460 khz; measured in test circuit of fig.1; all measurements are with respect to ground (pin 16); unless otherwise speci?ed parameter conditions symbol min. typ. max. unit supplies supply voltage (pin 13) v 13 7.5 8.5 10 v supply current (pin 13) i 13 15 23 27 ma rf stage and mixer input voltage (dc value) v 14-15 - v p / 2 - v rf input impedance at v i < 300 m vr 14-15 - 5.5 - k w c 14-15 - 25 - pf rf input impedance at v i > 10 mv r 14-15 - 8 - k w c 14-15 - 22 - pf if output impedance r 1 500 0 0 k w c 1 - 6 - pf conversion transconductance before start of agc i 1 /v i - 6.5 - ma/v maximum if output voltage, inductive coupling to pin 1, (peak-to-peak value) v 1(p-p) - 5 - v dc value of output current (pin 1) at v i = 0 v i 1 - 1.2 - ma agc range of input stage - 30 - db rf signal handling capability: input voltage for thd = 3% at m = 80% (rms value) v i(rms) - 500 - mv oscillator frequency range d f 0.6 - 60 mhz oscillator amplitude (pins 11 to 12) (peak-to-peak value) v 11-12(p-p) - 130 150 mv external load impedance r 11-12(ext) 0.5 - 200 k w external load impedance for no oscillation r 11-12(ext) -- 60 w ripple rejection at v p = 100 mv (rms value); f p = 100 hz (rr = 20 log [v 13 /v 11 ])
march 1989 7 philips semiconductors product speci?cation am receiver circuit TDA1072AT source voltage for switching diodes (6 v be )v 11 - 4.2 - v dc output current (for switching diodes) v p = v 13 9 v i 11 0 - 5ma change of output voltage at d i 11 = 20 ma (switch to maximum load) d v 11 - 0.5 - v buffered oscillator output dc output voltage v 10 - 0.7 - v output signal amplitude (peak-to-peak value) v 10(p-p) - 320 - mv output impedance r 10 - 170 -w output current i 10(peak) --- 3ma if, agc and af stages dc input voltage v 3-4 - 2 - v if input impedance r 3-4 2.4 3.0 3.9 k w c 3-4 - 7 - pf if input voltage for thd = 3% at m = 80% v 3-4 - 90 - mv voltage gain before start of agc v 3-4 /v 6 - 68 - db agc range of if stages: change of v 3-4 for 1 db change of v o(af) ; v 3-4(ref) = 75 mv d v 3-4 - 55 - db af output voltage at v 3-4(if) = 50 m vv o(af) - 130 - mv af output voltage at v 3-4(if) = 1 mv v o(af) - 310 - mv af output impedance (pin 6) ? z o ?- 3.5 - k w indicator driver output voltage at v i = 0 mv r l(9) = 2.7 k w v 9 - 20 150 mv output voltage at v i = 500 mv r l(9) = 2.7 k w v 9 2.5 2.8 3.1 v load resistance r l(9) 2.7 -- k w parameter conditions symbol min. typ. max. unit
march 1989 8 philips semiconductors product speci?cation am receiver circuit TDA1072AT operating characteristics v p = 8.5 v; f i = 1 mhz; m = 30%; f m = 400 hz; t amb = 25 c; measured in fig.1; unless otherwise speci?ed standby switch switching threshold at v p = 7.5 to 18 v; t amb = - 40 to +80 c on-voltage v 2 0 - 2v off-voltage v 2 3.5 - 20 v on-current v 2 = 0 v i 2 --- 200 m a off-current v 2 = 20 v i 2 -- 10 m a parameter conditions symbol min. typ. max. unit rf sensitivity rf input required for s+n/n = 6 db v i - 1.5 -m v s+n/n = 26 db v i - 15 -m v s+n/n = 46 db v i - 150 -m v rf input at start of agc v i - 30 -m v rf large signal handling rf input at thd = 3%; m = 80% v i - 500 - mv thd = 3%; m = 30% v i - 700 - mv thd = 10%; m = 30% v i - 900 - mv agc range change of v i for 1 db change of v o(af) v i(ref) = 500 mv d v i - 86 - db 6 db change of v o(af) v i(ref) = 500 mv d v i - 91 - db output signal af output voltage at v i = 4 m v m = 80% v o(af) - 130 - mv v i = 1 mv v o(af) 240 310 390 mv total harmonic distortion at v i = 1 mv m = 80% d tot - 0.5 - % v i = 500 mv m = 30% d tot - 1 - % signal-to-noise ratio v i = 100 mv s + n/n - 58 - db parameter conditions symbol min. typ. max. unit
march 1989 9 philips semiconductors product speci?cation am receiver circuit TDA1072AT ripple rejection at v i = 2 mv v p = 100 mv (rms value) f p = 100 hz (rr = 20 log [v p /v o(af) ]) rr - 38 - db unwanted signals suppression of if whistles at v i = 15 m v; m = 0% related to af signal of m = 30% at f i ? 2 f if a 2if - 37 - db at f i ? 3 f if a 3if - 44 - db if suppression at rf input for symmetrical input a if - 40 - db for asymmetrical input a if - 40 - db residual oscillator signal at mixer output at f osc i (osc) - 1 -m a at 2 f osc i (2osc) - 1.1 -m a parameter conditions symbol min. typ. max. unit
march 1989 10 philips semiconductors product speci?cation am receiver circuit TDA1072AT application information fig.2 oscillator circuit using quartz crystal; centre frequency = 27 mhz. (1) capacitor values depend on crystal type. (2) coil data: 9 windings of 0.1 mm dia laminated cu wire on toko coil set 7k 199cn; q o = 80. fig.3 af output as a function of rf input in the circuit of fig.1; f i = 1 mhz; f m = 400 hz; m = 30%. fig.4 total harmonic distortion and s + n/n as functions of rf input in the circuit of fig.1; m = 30% for (s + n)/n curve and m = 80% for thd curve.
march 1989 11 philips semiconductors product speci?cation am receiver circuit TDA1072AT fig.5 total harmonic distortion as a function of modulation frequency at v i = 5 mv; m = 80%; measured in the circuit of fig.1 with c 7-16(ext) = 0 m f and 2.2 m f. fig.6 indicator driver voltage as a function of rf input in the circuit of fig.1. fig.7 typical frequency response curves from fig.1 showing the effects of filtering. ??? with if filter ? - ? - with af filter ??? with if and af filter
march 1989 12 philips semiconductors product speci?cation am receiver circuit TDA1072AT fig.8 car radio application with inductive tuning. fig.9 af output as a function of rf input using the circuit of fig.8 with that of fig.1.
march 1989 13 philips semiconductors product speci?cation am receiver circuit TDA1072AT fig.10 suppression of cross-modulation as a function of input signal, measured in the circuit of fig.8 with the input circuit as shown in fig.11. curve is for wanted v o(af) /unwanted v o(af) = 20 db; v rfw , v rfu are signals at the aerial input, v' aew , v' aeu are signals at the unloaded output of the aerial. wanted signal (v' aew , v rfw ): f i = 1 mhz; f m = 400 hz; m = 30%. unwanted signal (v' aeu , v rfu ): f i = 900 khz; f m = 400 hz; m = 30%. effective selectivity of input tuned circuit = 21 db. fig.11 input circuit to show cross-modulation suppression (see fig.10).
march 1989 14 philips semiconductors product speci?cation am receiver circuit TDA1072AT fig.12 oscillator amplitude as a function of the impedance at pins 11 and 12 in the circuit of fig.8. fig.13 total harmonic distortion and (s + n)/n as functions of rf input using the circuit of fig.8 with that of fig.1.
march 1989 15 philips semiconductors product speci?cation am receiver circuit TDA1072AT fig.14 forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in fig.14; centre frequency = 455 khz.
march 1989 16 philips semiconductors product speci?cation am receiver circuit TDA1072AT fig.15 if filter variants applied to the circuit of fig.1; for filter data refer to table 1.
march 1989 17 philips semiconductors product speci?cation am receiver circuit TDA1072AT table 1 data for if ?lters shown in fig.15. criterium for adjustment is z f = maximum (optional selectivity curve at centre frequency f o = 455 khz). see also fig.14. * the beginning of an arrow indicates the beginning of a winding; n1 is always the inner winding. n2 the outer winding. filter no. 1 2 3 4 unit coil data l1 l1 l1 l2 l1 value of c 3900 430 3900 4700 3900 pf n1: n2 12 : 32 13 : (33 + 66) 15 : 31 29 : 29 13 : 31 diameter of cu laminated wire 0.09 0.08 0.09 0.08 0.09 mm q o 65 (typ.) 50 75 60 75 schematic * of windings (n1) (n2) toko order no. 7xns-a7523dy l7pes-a0060btg 7xns-a7518dy 7xns-a7521aih 7xns-a7519dy resonators murata type sfz455a sfz455a sfz455a sft455b d (typical value) 4 4 4 6 db r g , r l 33 3 3 k w bandwidth ( - 3 db) 4.2 4.2 4.2 4.5 khz s 9khz 24 24 24 38 db filter data z i 4.8 3.8 4.2 4.8 k w q b 57 40 52 (l1) 18 (l2) 55 z f 0.70 0.67 0.68 0.68 k w bandwidth ( - 3 db) 3.6 3.8 3.6 4.0 khz s 9khz 35 31 36 42 db s 18khz 52 49 54 64 db s 27khz 63 58 66 74 db
march 1989 18 philips semiconductors product speci?cation am receiver circuit TDA1072AT fig.16 car radio application with capacitive diode tuning and electronic mw/lw switching. the circuit includes pre-stage agc optimised for good large-signal handling. (1) values of capacitors depend on the selected group of capacitive diodes bb112. (2) for if filter and coil data refer to fig.1.
march 1989 19 philips semiconductors product speci?cation am receiver circuit TDA1072AT package outline x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 8 9 1 16 y pin 1 index unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.0 0.4 sot109-1 91-08-13 95-01-23 076e07s ms-012ac 0.069 0.0098 0.0039 0.057 0.049 0.01 0.019 0.014 0.0098 0.0075 0.39 0.38 0.16 0.15 0.050 1.05 0.041 0.24 0.23 0.028 0.020 0.028 0.012 0.01 0.25 0.01 0.004 0.039 0.016 0 2.5 5 mm scale so16: plastic small outline package; 16 leads; body width 3.9 mm sot109-1
march 1989 20 philips semiconductors product speci?cation am receiver circuit TDA1072AT soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
march 1989 21 philips semiconductors product speci?cation am receiver circuit TDA1072AT definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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